IDD03SG60C Infineon Technologies
на замовлення 3400 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IDD03SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 3A; PG-TO252-3; 38W, Mounting: SMD, Kind of package: reel; tape, Technology: CoolSiC™ 3G; SiC, Power dissipation: 38W, Max. forward voltage: 2.1V, Load current: 3A, Max. forward impulse current: 9.7A, Max. off-state voltage: 600V, Leakage current: 0.23µA, Case: PG-TO252-3, Type of diode: Schottky rectifying, Semiconductor structure: single diode.
Інші пропозиції IDD03SG60C
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IDD03SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 3A; PG-TO252-3; 38W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 38W Max. forward voltage: 2.1V Load current: 3A Max. forward impulse current: 9.7A Max. off-state voltage: 600V Leakage current: 0.23µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
товар відсутній |
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IDD03SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 3A; PG-TO252-3; 38W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 38W Max. forward voltage: 2.1V Load current: 3A Max. forward impulse current: 9.7A Max. off-state voltage: 600V Leakage current: 0.23µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
товар відсутній |