Технічний опис IDD08SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 8A; PG-TO252-3; 100W, Mounting: SMD, Kind of package: reel; tape, Technology: CoolSiC™ 3G; SiC, Power dissipation: 100W, Max. forward voltage: 1.8V, Load current: 8A, Max. forward impulse current: 36A, Max. off-state voltage: 600V, Leakage current: 0.6µA, Case: PG-TO252-3, Type of diode: Schottky rectifying, Semiconductor structure: single diode.
Інші пропозиції IDD08SG60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IDD08SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 8A; PG-TO252-3; 100W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 100W Max. forward voltage: 1.8V Load current: 8A Max. forward impulse current: 36A Max. off-state voltage: 600V Leakage current: 0.6µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
товар відсутній |