IDD09SG60C

IDD09SG60C INFINEON TECHNOLOGIES


Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 9A; PG-TO252-3; 115W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 115W
Max. forward voltage: 1.8V
Load current: 9A
Max. forward impulse current: 42A
Max. off-state voltage: 600V
Leakage current: 0.7µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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Технічний опис IDD09SG60C INFINEON TECHNOLOGIES

Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 9A; PG-TO252-3; 115W, Mounting: SMD, Kind of package: reel; tape, Technology: CoolSiC™ 3G; SiC, Power dissipation: 115W, Max. forward voltage: 1.8V, Load current: 9A, Max. forward impulse current: 42A, Max. off-state voltage: 600V, Leakage current: 0.7µA, Case: PG-TO252-3, Type of diode: Schottky rectifying, Semiconductor structure: single diode.

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IDD09SG60C IDD09SG60C Виробник : Infineon Technologies Infineon-IDD09SG60C-DS-v02_04-en-522577.pdf Schottky Diodes & Rectifiers SIC DIODEN
товар відсутній
IDD09SG60C IDD09SG60C Виробник : INFINEON TECHNOLOGIES Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 600V; 9A; PG-TO252-3; 115W
Mounting: SMD
Kind of package: reel; tape
Technology: CoolSiC™ 3G; SiC
Power dissipation: 115W
Max. forward voltage: 1.8V
Load current: 9A
Max. forward impulse current: 42A
Max. off-state voltage: 600V
Leakage current: 0.7µA
Case: PG-TO252-3
Type of diode: Schottky rectifying
Semiconductor structure: single diode
товар відсутній