Технічний опис IDD10SG60CXTMA1 Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 290pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO252-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A, Current - Reverse Leakage @ Vr: 90 µA @ 600 V.
Інші пропозиції IDD10SG60CXTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IDD10SG60CXTMA1 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 600V 10A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 290pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Current - Reverse Leakage @ Vr: 90 µA @ 600 V |
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