IDD12SG60C Infineon Technologies
на замовлення 1533 шт:
термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис IDD12SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W, Mounting: SMD, Kind of package: reel; tape, Technology: CoolSiC™ 3G; SiC, Power dissipation: 125W, Max. forward voltage: 1.8V, Load current: 12A, Max. forward impulse current: 51A, Max. off-state voltage: 600V, Leakage current: 1µA, Case: PG-TO252-3, Type of diode: Schottky rectifying, Semiconductor structure: single diode.
Інші пропозиції IDD12SG60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IDD12SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 125W Max. forward voltage: 1.8V Load current: 12A Max. forward impulse current: 51A Max. off-state voltage: 600V Leakage current: 1µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
товар відсутній |
|
|
|
IDD12SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 125W Max. forward voltage: 1.8V Load current: 12A Max. forward impulse current: 51A Max. off-state voltage: 600V Leakage current: 1µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
товар відсутній |