IDH04S60CAKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 18279 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
183+ | 109.36 грн |
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Технічний опис IDH04S60CAKSA1 Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції IDH04S60CAKSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IDH04S60CAKSA1 | Виробник : Infineon Technologies | Rectifier Diode Schottky 600V 4A 2-Pin(2+Tab) TO-220 Tube |
товар відсутній |
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IDH04S60CAKSA1 | Виробник : Infineon Technologies |
Description: DIODE SIL CARB 600V 4A TO220-2-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товар відсутній |
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IDH04S60CAKSA1 | Виробник : Infineon Technologies | Schottky Diodes & Rectifiers SIC DIODES |
товар відсутній |