IDP06E60 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GEN PURP 600V 14.7A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 14.7A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Технічний опис IDP06E60 Infineon Technologies
Description: DIODE GEN PURP 600V 14.7A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 70 ns, Technology: Standard, Current - Average Rectified (Io): 14.7A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції IDP06E60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IDP06E60 | Виробник : Infineon Technologies |
Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 600V 6A |
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