IKA10N60TXKSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Chip N-CH 600V 11.7A 30000mW Automotive 3-Pin(3+Tab) TO-220FP Tube
на замовлення 174 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.23 грн |
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Технічний опис IKA10N60TXKSA1 Infineon Technologies
Description: IGBT 600V 11.7A 30W TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A, Supplier Device Package: PG-TO220-3-31, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/215ns, Switching Energy: 430µJ, Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 62 nC, Part Status: Active, Current - Collector (Ic) (Max): 11.7 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 30 W.
Інші пропозиції IKA10N60TXKSA1 за ціною від 72.8 грн до 113.26 грн
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IKA10N60TXKSA1 | Виробник : INFINEON |
Description: INFINEON - IKA10N60TXKSA1 - IGBT, 11.7 A, 1.5 V, 30 W, 600 V, TO-220FP, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V usEccn: EAR99 euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-220FP Anzahl der Pins: 3Pin(s) Produktpalette: TRENCHSTOP Kollektor-Emitter-Spannung, max.: 600V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 11.7A |
на замовлення 493 шт: термін постачання 21-31 дні (днів) |
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IKA10N60TXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 7.2A Power dissipation: 30W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 20ns Turn-off time: 250ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IKA10N60TXKSA1 | Виробник : Infineon Technologies |
Description: IGBT 600V 11.7A 30W TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO220-3-31 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 430µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 11.7 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 30 W |
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IKA10N60TXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 7.2A Power dissipation: 30W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 67nC Kind of package: tube Turn-on time: 20ns Turn-off time: 250ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |