IKA15N65ET6XKSA1 Infineon Technologies


Infineon-IKA15N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d635e5280 Виробник: Infineon Technologies
Description: IGBT 650V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 35.3 W
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IKA15N65ET6XKSA1 Infineon Technologies

Description: IGBT 650V 15A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 69 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A, Supplier Device Package: PG-TO220-3-FP, IGBT Type: Trench, Td (on/off) @ 25°C: 22ns/117ns, Switching Energy: 230µJ (on), 110µJ (off), Test Condition: 400V, 11.5A, 47Ohm, 15V, Gate Charge: 37 nC, Part Status: Active, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 57.5 A, Power - Max: 35.3 W.

Інші пропозиції IKA15N65ET6XKSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IKA15N65ET6XKSA1 IKA15N65ET6XKSA1 Виробник : Infineon Technologies Infineon-IKA15N65ET6-DataSheet-v02_03-EN-1731557.pdf IGBT Transistors IGBT PRODUCTS
товар відсутній