IKQ100N60TAXKSA1

IKQ100N60TAXKSA1 Infineon Technologies


dgdlfileid5546d46249cd10140149d20bfacc4ddc.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 160A 714000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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Технічний опис IKQ100N60TAXKSA1 Infineon Technologies

Description: IGBT 600V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 225 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, Supplier Device Package: PG-TO247-3-46, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/290ns, Switching Energy: 3.1mJ (on), 2.5mJ (off), Test Condition: 400V, 100A, 3.6Ohm, 15V, Gate Charge: 610 nC, Grade: Automotive, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 714 W, Qualification: AEC-Q101.

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IKQ100N60TAXKSA1 IKQ100N60TAXKSA1 Виробник : Infineon Technologies IKQ100N60TA.pdf Description: IGBT 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 225 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
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IKQ100N60TAXKSA1 IKQ100N60TAXKSA1 Виробник : Infineon Technologies Infineon-IKQ100N60TA-DS-v02_02-EN-540123.pdf IGBT Transistors IGBT PRODUCTS
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