IKQ120N60TAXKSA1 Infineon Technologies
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1152.74 грн |
| 10+ | 1044.15 грн |
| 25+ | 870.57 грн |
| 100+ | 767.09 грн |
| 240+ | 729.03 грн |
| 480+ | 716.35 грн |
| 1200+ | 674.96 грн |
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Технічний опис IKQ120N60TAXKSA1 Infineon Technologies
Description: IGBT TRENCH/FS 600V 160A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 280 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A, Supplier Device Package: PG-TO247-3-46, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/310ns, Switching Energy: 4.1mJ (on), 2.8mJ (off), Test Condition: 400V, 120A, 3Ohm, 15V, Gate Charge: 772 nC, Grade: Automotive, Part Status: Obsolete, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 833 W, Qualification: AEC-Q101.
Інші пропозиції IKQ120N60TAXKSA1
| Фото | Назва | Виробник | Інформація |
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IKQ120N60TAXKSA1 | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 160A 833000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IKQ120N60TAXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKQ120N60TAXKSA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH/FS 600V 160A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 280 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/310ns Switching Energy: 4.1mJ (on), 2.8mJ (off) Test Condition: 400V, 120A, 3Ohm, 15V Gate Charge: 772 nC Grade: Automotive Part Status: Obsolete Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 480 A Power - Max: 833 W Qualification: AEC-Q101 |
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IKQ120N60TAXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 120A Power dissipation: 833W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 772nC Kind of package: tube Turn-on time: 76ns Turn-off time: 343ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |