IKU04N60RBKMA1

IKU04N60RBKMA1 Infineon Technologies


ds_ikd_u04n60r.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 8A 75000mW 3-Pin(3+Tab) TO-251
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Технічний опис IKU04N60RBKMA1 Infineon Technologies

Description: IGBT 600V 8A 75W TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO251-3, IGBT Type: Trench, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 240µJ, Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.

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IKU04N60RBKMA1 IKU04N60RBKMA1 Виробник : Infineon Technologies IK(D,U)04N60R.pdf Description: IGBT 600V 8A 75W TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 240µJ
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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