IKZ50N65ES5XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT TRENCH 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-4
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/294ns
Switching Energy: 770µJ (on), 880µJ (off)
Test Condition: 400V, 25A, 23.1Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 93+ | 220.44 грн |
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Технічний опис IKZ50N65ES5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 36ns/294ns, Switching Energy: 770µJ (on), 880µJ (off), Test Condition: 400V, 25A, 23.1Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 274 W.
Інші пропозиції IKZ50N65ES5XKSA1 за ціною від 181.59 грн до 436.95 грн
| Фото | Назва | Виробник | Інформація |
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IKZ50N65ES5XKSA1 | Виробник : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
на замовлення 509 шт: термін постачання 21-30 дні (днів) |
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IKZ50N65ES5XKSA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 650V 80A 274000mW 4-Pin(4+Tab) TO-247 Tube |
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IKZ50N65ES5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 58ns Turn-off time: 326ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IKZ50N65ES5XKSA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 36ns/294ns Switching Energy: 770µJ (on), 880µJ (off) Test Condition: 400V, 25A, 23.1Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 274 W |
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IKZ50N65ES5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60.5A; 137W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 60.5A Power dissipation: 137W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 58ns Turn-off time: 326ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |