на замовлення 1 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 546.77 грн |
| 10+ | 495.97 грн |
| 25+ | 368.52 грн |
| 100+ | 334.47 грн |
| 240+ | 319.79 грн |
| 480+ | 265.04 грн |
| 1200+ | 253.69 грн |
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Технічний опис IKZ75N65ES5XKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 72 ns, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A, Supplier Device Package: PG-TO247-4, IGBT Type: Trench, Td (on/off) @ 25°C: 46ns/405ns, Switching Energy: 1.3mJ (on), 1.5mJ (off), Test Condition: 400V, 15A, 22.3Ohm, 15V, Gate Charge: 164 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 395 W.
Інші пропозиції IKZ75N65ES5XKSA1
| Фото | Назва | Виробник | Інформація |
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IKZ75N65ES5XKSA1 | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 80A 395000mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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IKZ75N65ES5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 197W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 164nC Kind of package: tube Turn-on time: 71ns Turn-off time: 427ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKZ75N65ES5XKSA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A Supplier Device Package: PG-TO247-4 IGBT Type: Trench Td (on/off) @ 25°C: 46ns/405ns Switching Energy: 1.3mJ (on), 1.5mJ (off) Test Condition: 400V, 15A, 22.3Ohm, 15V Gate Charge: 164 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
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IKZ75N65ES5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 197W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 164nC Kind of package: tube Turn-on time: 71ns Turn-off time: 427ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |