IMH24T110 Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 20V SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SMT6
Description: TRANS PREBIAS 2NPN 20V SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SMT6
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Технічний опис IMH24T110 Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 20V SC74, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 2.5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 2.2kOhms, Supplier Device Package: SMT6.
Інші пропозиції IMH24T110
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IMH24T110 | Виробник : ROHM Semiconductor |
 Bipolar Transistors - Pre-Biased Trans Digital BJT NPN 20V 600mA |
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