IPB80N04S2H4-ATMA2 Infineon Technologies
Виробник: Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 161+ | 138.76 грн |
Відгуки про товар
Написати відгук
Технічний опис IPB80N04S2H4-ATMA2 Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V.
Інші пропозиції IPB80N04S2H4-ATMA2 за ціною від 117.5 грн до 280.4 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CHANNEL_30/40V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
на замовлення 943 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
на замовлення 6977 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|||||||||||||||||
|
|
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|||||||||||||||||
|
|
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|||||||||||||||||
 |
IPB80N04S2H4ATMA2 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 103nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||||||
|
|
IPB80N04S2H4ATMA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CHANNEL_30/40V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
товар відсутній |
|||||||||||||||||
| IPB80N04S2-H4ATMA2 | Виробник : Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
товар відсутній |
||||||||||||||||||
|
|
IPB80N04S2H4ATMA2 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 300W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 103nC Kind of channel: enhanced |
товар відсутній |