IPB80N06S405ATMA2 Infineon Technologies
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 55.77 грн |
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Технічний опис IPB80N06S405ATMA2 Infineon Technologies
Description: MOSFET N-CH 60V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPB80N06S405ATMA2 за ціною від 57.08 грн до 147.99 грн
| Фото | Назва | Виробник | Інформація |
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IPB80N06S405ATMA2 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 60V 80A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 741 шт: термін постачання 21-31 дні (днів) |
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IPB80N06S405ATMA2 | Виробник : Infineon Technologies |
MOSFET N-Ch 60V 80A D2PAK-2 |
на замовлення 937 шт: термін постачання 21-30 дні (днів) |
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| IPB80N06S405ATMA2 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Mounting: SMD Case: PG-TO263-3-2 Kind of package: reel; tape Power dissipation: 107W Polarisation: unipolar Gate charge: 81nC Gate-source voltage: ±20V Pulsed drain current: 320A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 75A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET кількість в упаковці: 1000 шт |
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IPB80N06S405ATMA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 |
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| IPB80N06S405ATMA2 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 320A; 107W Mounting: SMD Case: PG-TO263-3-2 Kind of package: reel; tape Power dissipation: 107W Polarisation: unipolar Gate charge: 81nC Gate-source voltage: ±20V Pulsed drain current: 320A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 75A On-state resistance: 5.4mΩ Type of transistor: N-MOSFET |
товар відсутній |