IPBE65R099CFD7AATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 650V 24A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
на замовлення 1910 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 86+ | 234.81 грн |
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Технічний опис IPBE65R099CFD7AATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V, Power Dissipation (Max): 127W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 630µA, Supplier Device Package: PG-TO263-7-3-10, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPBE65R099CFD7AATMA1 за ціною від 207.77 грн до 472.37 грн
| Фото | Назва | Виробник | Інформація |
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IPBE65R099CFD7AATMA1 | Виробник : Infineon Technologies |
MOSFET AUTOMOTIVE_COOLMOS |
на замовлення 989 шт: термін постачання 21-30 дні (днів) |
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| IPBE65R099CFD7AATMA1 | Виробник : Infineon Technologies |
N-Channel MOSFET Transistor |
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IPBE65R099CFD7AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO263-7-3-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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IPBE65R099CFD7AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 24A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V Power Dissipation (Max): 127W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-TO263-7-3-10 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |