IPD035N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 90A TO252-3, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 93µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V.