IPD60R1K5PFD7SAUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 600V 3.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 50.17 грн |
| 10+ | 41.96 грн |
| 100+ | 29.04 грн |
| 500+ | 22.77 грн |
| 1000+ | 19.38 грн |
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Технічний опис IPD60R1K5PFD7SAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40µA, Supplier Device Package: PG-TO252-3-344, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V.
Інші пропозиції IPD60R1K5PFD7SAUMA1 за ціною від 16.5 грн до 53.18 грн
| Фото | Назва | Виробник | Інформація |
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IPD60R1K5PFD7SAUMA1 | Виробник : Infineon Technologies |
MOSFET CONSUMER |
на замовлення 2495 шт: термін постачання 140-149 дні (днів) |
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| IPD60R1K5PFD7SAUMA1 | Виробник : Infineon Technologies |
SP004748872 |
товар відсутній |
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| IPD60R1K5PFD7SAUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A Case: TO252 Mounting: SMD On-state resistance: 2.892Ω Gate-source voltage: ±20V Pulsed drain current: 6A Power dissipation: 22W Polarisation: unipolar Technology: CoolMOS™ PFD7 Features of semiconductor devices: ESD protected gate Drain current: 2.2A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET кількість в упаковці: 2500 шт |
товар відсутній |
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IPD60R1K5PFD7SAUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 3.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V |
товар відсутній |
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| IPD60R1K5PFD7SAUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 2.2A; Idm: 6A Case: TO252 Mounting: SMD On-state resistance: 2.892Ω Gate-source voltage: ±20V Pulsed drain current: 6A Power dissipation: 22W Polarisation: unipolar Technology: CoolMOS™ PFD7 Features of semiconductor devices: ESD protected gate Drain current: 2.2A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET |
товар відсутній |