на замовлення 2116 шт:
термін постачання 481-490 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 627.21 грн |
| 10+ | 552.38 грн |
| 100+ | 360.25 грн |
| 250+ | 358.18 грн |
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Технічний опис IPDD60R102G7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23A HDSOP-10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4V @ 390µA, Supplier Device Package: PG-HDSOP-10-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V.
Інші пропозиції IPDD60R102G7XTMA1 за ціною від 224.7 грн до 224.7 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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| IPDD60R102G7XTMA1 | Виробник : Infineon Technologies |
 Description: IPDD60R102 - HIGH POWER_NEWPackaging: Bulk Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V |
на замовлення 192 шт: термін постачання 21-31 дні (днів) |
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| IPDD60R102G7XTMA1 | Виробник : INFINEON TECHNOLOGIES |
IPDD60R102G7XTMA1 SMD N channel transistors |
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IPDD60R102G7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 23A HDSOP-10 Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V |
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IPDD60R102G7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 23A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 7.8A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 400 V |
товар відсутній |