IPG20N04S4L07AATMA1 Infineon Technologies
на замовлення 14651 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.95 грн |
| 10+ | 99.04 грн |
| 100+ | 68.1 грн |
| 250+ | 63.36 грн |
| 500+ | 57.21 грн |
| 1000+ | 47.2 грн |
| 2500+ | 46.6 грн |
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Технічний опис IPG20N04S4L07AATMA1 Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 65W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: PG-TDSON-8-10, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IPG20N04S4L07AATMA1
| Фото | Назва | Виробник | Інформація |
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IPG20N04S4L07AATMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R |
товар відсутній |
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IPG20N04S4L07AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
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IPG20N04S4L07AATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |