IPP04CN10NGXKSA1 Infineon Technologies
на замовлення 501 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 415.88 грн |
| 10+ | 368.03 грн |
| 100+ | 262.38 грн |
| 500+ | 213.35 грн |
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Технічний опис IPP04CN10NGXKSA1 Infineon Technologies
Description: MV POWER MOS, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V.
Інші пропозиції IPP04CN10NGXKSA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPP04CN10NGXKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 100V 100A Automotive 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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IPP04CN10NGXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 158nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPP04CN10NGXKSA1 | Виробник : Infineon Technologies |
Description: MV POWER MOS Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 50 V |
товар відсутній |
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IPP04CN10NGXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: THT Gate charge: 158nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |