IPP052NE7N3GHKSA1

IPP052NE7N3GHKSA1 Infineon Technologies


1225381233188515infineon-ipp052ne7n3g-ds-v02_01-en.pdffileid5546d4624fb7fef2014ff.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220 Tube
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Технічний опис IPP052NE7N3GHKSA1 Infineon Technologies

Description: MOSFET N-CH 75V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 91µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V.

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IPP052NE7N3GHKSA1 IPP052NE7N3GHKSA1 Виробник : Infineon Technologies Infineon-IPP052NE7N3+G-DS-v02_01-EN.pdf?fileId=5546d4624fb7fef2014ff96f171905f2 Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
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