IPP062NE7N3GXKSA1 Infineon Technologies
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.26 грн |
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Технічний опис IPP062NE7N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 73A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 70µA, Supplier Device Package: PG-TO220-3, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 37.5 V.
Інші пропозиції IPP062NE7N3GXKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
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IPP062NE7N3GXKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 136W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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IPP062NE7N3GXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 73A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 70µA Supplier Device Package: PG-TO220-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 37.5 V |
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IPP062NE7N3GXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 136W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 136W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
товар відсутній |