IPP065N03LGXKSA1

IPP065N03LGXKSA1 Infineon Technologies


IPP065N03L_rev1.02.pdf?folderId=db3a30431441fb5d01148c401f250e27&fileId=db3a30431441fb5d011492371ebc0fe2 Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
на замовлення 16500 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
742+26.47 грн
Мінімальне замовлення: 742
Відгуки про товар
Написати відгук

Технічний опис IPP065N03LGXKSA1 Infineon Technologies

Description: MOSFET N-CH 30V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO220-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V.

Інші пропозиції IPP065N03LGXKSA1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IPP065N03LGXKSA1 IPP065N03LGXKSA1 Виробник : Infineon Technologies ipp065n03l_rev1.02.pdf Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220 Tube
товар відсутній
IPP065N03LGXKSA1 IPP065N03LGXKSA1 Виробник : Infineon Technologies IPP065N03L_rev1.02.pdf?folderId=db3a30431441fb5d01148c401f250e27&fileId=db3a30431441fb5d011492371ebc0fe2 Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
товар відсутній