Технічний опис IPP084N06L3GHKSA1 Infineon Technologies
Description: MOSFET N-CH 60V 50A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 34µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V.
Інші пропозиції IPP084N06L3GHKSA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IPP084N06L3GHKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
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IPP084N06L3GHKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
товар відсутній |