IPT60R022S7XTMA1 Infineon Technologies
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 447.93 грн |
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Технічний опис IPT60R022S7XTMA1 Infineon Technologies
Description: MOSFET N-CH 600V 23A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.44mA, Supplier Device Package: PG-HSOF-8-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V.
Інші пропозиції IPT60R022S7XTMA1 за ціною від 437.31 грн до 829.22 грн
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IPT60R022S7XTMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 600V 23A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V |
на замовлення 1034 шт: термін постачання 21-31 дні (днів) |
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IPT60R022S7XTMA1 | Виробник : Infineon Technologies |
MOSFET HIGH POWER_NEW |
на замовлення 2696 шт: термін постачання 21-30 дні (днів) |
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| IPT60R022S7XTMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: SMD Pulsed drain current: 375A Power dissipation: 390W Gate charge: 31nC Polarisation: unipolar Technology: CoolMOS™ S7 Drain current: 23A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel Case: PG-HSOF-8 On-state resistance: 22mΩ кількість в упаковці: 2000 шт |
товар відсутній |
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IPT60R022S7XTMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 23A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Supplier Device Package: PG-HSOF-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V |
товар відсутній |
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| IPT60R022S7XTMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A Mounting: SMD Pulsed drain current: 375A Power dissipation: 390W Gate charge: 31nC Polarisation: unipolar Technology: CoolMOS™ S7 Drain current: 23A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel Case: PG-HSOF-8 On-state resistance: 22mΩ |
товар відсутній |