на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 558.46 грн |
10+ | 471.4 грн |
25+ | 371.86 грн |
100+ | 341.82 грн |
250+ | 321.79 грн |
500+ | 301.76 грн |
1000+ | 271.05 грн |
Відгуки про товар
Написати відгук
Технічний опис IPTG039N15NM5ATMA1 Infineon Technologies
Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 319W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 243µA, Supplier Device Package: PG-HSOG-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V.
Інші пропозиції IPTG039N15NM5ATMA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IPTG039N15NM5ATMA1 | Виробник : Infineon Technologies | SP005676943 |
товар відсутній |
||
IPTG039N15NM5ATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 150V 21A 9-Pin(8+Tab) HSOG T/R |
товар відсутній |
||
IPTG039N15NM5ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 243µA Supplier Device Package: PG-HSOG-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
товар відсутній |
||
IPTG039N15NM5ATMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 243µA Supplier Device Package: PG-HSOG-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 75 V |
товар відсутній |