IPW60R190P6 - Transistors - Field N-cannal

IPW60R190P6

IPW60R190P6

Product id: 107275
Manufacturer:
Transistors - Field N-cannal

INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw
On stock/available

Technical description IPW60R190P6

Price IPW60R190P6 From 60.2 UAH to 138.87 UAH

IPW60R190P6
IPW60R190P6
Manufacturer: Rochester Electronics, LLC
Description: MOSFET N-CH 600V 20.2A TO247
Packaging: Bulk
Package / Case: TO-247-3
Supplier Device Package: PG-TO247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 151W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
Manufacturer: Infineon Technologies
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw
available 30 pc(s)
lead time 7-22 days
30+ 60.2 UAH
IPW60R190P6
IPW60R190P6
Manufacturer: Infineon Technologies
MOSFET HIGH POWER_PRC/PRFRM
Infineon-IPX60R190P6-DS-v02_02-EN-776553.pdf
available 262 pc(s)
lead time 8-21 days
1+ 138.87 UAH
10+ 115.09 UAH
25+ 94.77 UAH
100+ 82.26 UAH
IPW60R190P6
Manufacturer:
IPW60R190P6 MOSFET HIGH POWER_PRC/PRFRM
INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw
out of stock, you can ask lead time by adding item to cart