IRF100B201 - Transistors - Field N-cannal

IRF100B201

Product id: 172773
Manufacturer:
Transistors - Field N-cannal

htmlspecialchars($datasheet_name)
On stock/available

Technical description IRF100B201

Price IRF100B201 From 1.77 $ to 4.01 $

IRF100B201
Manufacturer: Infineon Technologies
Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
htmlspecialchars($datasheet_name) 		available 9 pc(s)
lead time 6-21 days
4+ 3.42 $
IRF100B201
Manufacturer: INFINEON TECHNOLOGIES
Material: IRF100B201 THT N channel transistors
htmlspecialchars($datasheet_name) 		available 95 pc(s)
lead time 7-14 days
1+ 3.52 $
3+ 3.07 $
4+ 2.12 $
19+ 2.02 $
IRF100B201
IRF100B201
Manufacturer: Infineon / IR
MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg
htmlspecialchars($datasheet_name) 		available 9222 pc(s)
lead time 8-21 days
1+ 3.69 $
10+ 3.1 $
100+ 2.09 $
500+ 1.77 $
IRF100B201
IRF100B201
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 100V 192A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: IRF100
Manufacturer: Infineon Technologies
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 441W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 115A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Drain to Source Voltage (Vdss): 100V
htmlspecialchars($datasheet_name) 		available 3613 pc(s)
lead time 7-22 days
1+ 4.01 $
10+ 3.6 $
25+ 3.07 $
100+ 2.61 $
500+ 2.15 $
1000+ 1.87 $
IRF100B201
Manufacturer: Infineon Technologies
Trans MOSFET N-CH 100V 192A 3-Pin(3+Tab) TO-220AB Tube
htmlspecialchars($datasheet_name) 		out of stock, you can ask lead time by adding item to cart