IRF614 (IR) - Transistors - Field N-cannal

IRF614

IRF614

Product id: 7922
Manufacturer: IR
Корпус: TO-263
Uds,V: 250 V
Idd,A: 2,8 A
Rds(on), Ohm: 2 Ohm
Ciss, pF/Qg, nC: 180/8,5
Монтаж: SMD

IRF614.pdf
On stock/available

Technical description IRF614

Price IRF614 From 0 UAH to 0 UAH

IRF614
IRF614
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 250V 2.7A TO220AB
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 36W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
irf614.pdf
out of stock, you can ask lead time by adding item to cart
IRF614
IRF614
Manufacturer: Harris Corporation
Description: ADVANCED POWER MOSFET
Part Status: Active
Package / Case: TO-220-3
Packaging: Bulk
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
HRISSD97-1.pdf?t.download=true&u=5oefqw
out of stock, you can ask lead time by adding item to cart
IRF614
IRF614
Manufacturer: Vishay / Siliconix
MOSFET RECOMMENDED ALT 844-IRF614PBF
91025-1768918.pdf
out of stock, you can ask lead time by adding item to cart
IRF614
Manufacturer: IR
09+
irf614.pdf HRISSD97-1.pdf?t.download=true&u=5oefqw
available 5030 pc(s)
lead time 14-28 days