Технічний опис IRF6623TR1PBF IOR
Description: MOSFET N-CH 20V 16A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric ST, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V, Power Dissipation (Max): 1.4W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DIRECTFET™ ST, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V.
Інші пропозиції IRF6623TR1PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF6623TR1PBF | Виробник : IR |
 07+ SMD |
на замовлення 4960 шт: термін постачання 14-28 дні (днів) |
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| IRF6623TR1PBF | Виробник : IR |
SMD 07+ |
на замовлення 4960 шт: термін постачання 14-28 дні (днів) |
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IRF6623TR1PBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 20V 16A 7-Pin Direct-FET ST T/R |
товар відсутній |
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IRF6623TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 16A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DIRECTFET™ ST Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
товар відсутній |
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IRF6623TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 16A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V Power Dissipation (Max): 1.4W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DIRECTFET™ ST Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
товар відсутній |
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IRF6623TR1PBF | Виробник : Infineon Technologies |
MOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC |
товар відсутній |