Технічний опис IRF7309QTRPBF IOR
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції IRF7309QTRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF7309QTRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R |
товар відсутній |
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IRF7309QTRPBF | Виробник : Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
товар відсутній |