Технічний опис IRF7476TRPBF Infineon / IR
Description: MOSFET N-CH 12V 15A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 6 V.
Інші пропозиції IRF7476TRPBF
| Фото | Назва | Виробник | Інформація |
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IRF7476TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 12V 15A 8-Pin SOIC T/R |
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IRF7476TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8 Mounting: SMD Kind of package: reel Case: SO8 Power dissipation: 2.5W Technology: HEXFET® Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 12V Drain current: 15A Type of transistor: N-MOSFET кількість в упаковці: 4000 шт |
товар відсутній |
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IRF7476TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 12V 15A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 6 V |
товар відсутній |
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IRF7476TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8 Mounting: SMD Kind of package: reel Case: SO8 Power dissipation: 2.5W Technology: HEXFET® Polarisation: unipolar Kind of channel: enhanced Drain-source voltage: 12V Drain current: 15A Type of transistor: N-MOSFET |
товар відсутній |