IRFR3418PBF - Transistors - Field N-cannal

IRFR3418PBF

Product id: 108147
Manufacturer:
Transistors - Field N-cannal

irfr3418pbf.pdf
On stock/available

Technical description IRFR3418PBF

  • MOSFET, N, 80V, 70A, D-PAK
  • Transistor Polarity:N
  • Max Current Id:30A
  • Max Voltage Vds:80V
  • On State Resistance:0.014ohm
  • Rds Measurement Voltage:10V
  • Max Voltage Vgs:20V
  • Power Dissipation:140W
  • Operating Temperature Range:-55`C to +175`C
  • Transistor Case Style:D-PAK
  • SVHC:No SVHC
  • Alternate Case Style:D-PAK
  • Case Style:DPAK
  • Cont Current Id:70A
  • Junction to Case Thermal Resistance A:1.05`C/W
  • Power Dissipation Pd:140W
  • Pulse Current Idm:280A
  • SMD Marking:IFRF3418
  • Termination Type:SMD
  • Transistor Type:MOSFET
  • Typ Voltage Vds:80V
  • Typ Voltage Vgs th:5.5V
  • Voltage Vgs Rds on Measurement:10V

Price IRFR3418PBF From 0 UAH to 0 UAH

IRFR3418
Manufacturer:
IRFR3418
available 10 pc(s)
lead time 2-3 days
IRFR3418PBF
Manufacturer:
IRFR3418PBF 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
irfr3418pbf.pdf
out of stock, you can ask lead time by adding item to cart
IRFR3418PBF
IRFR3418PBF
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 80V 70A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
irfr3418pbf.pdf
out of stock, you can ask lead time by adding item to cart