IRGB10B60KDPBF

IRGB10B60KDPBF Infineon Technologies


irgs10b60kdpbf.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 22A 156000mW 3-Pin(3+Tab) TO-220AB Tube
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Технічний опис IRGB10B60KDPBF Infineon Technologies

Description: IGBT 600V 22A 156W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 30ns/230ns, Switching Energy: 140µJ (on), 250µJ (off), Test Condition: 400V, 10A, 47Ohm, 15V, Gate Charge: 38 nC, Current - Collector (Ic) (Max): 22 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 44 A, Power - Max: 156 W.

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IRGB10B60KDPBF IRGB10B60KDPBF Виробник : Infineon Technologies IRG(B,S,SL)10B60KDPbF.pdf Description: IGBT 600V 22A 156W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/230ns
Switching Energy: 140µJ (on), 250µJ (off)
Test Condition: 400V, 10A, 47Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 44 A
Power - Max: 156 W
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IRGB10B60KDPBF IRGB10B60KDPBF Виробник : Infineon Technologies irgs10b60kdpbf-1228604.pdf IGBT Transistors 600V UltraFast 10-30kHz
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