IRGP4650D-EPBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 600V 76A 268W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 46ns/105ns
Switching Energy: 390µJ (on), 632µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 268 W
на замовлення 14489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 319.81 грн |
Відгуки про товар
Написати відгук
Технічний опис IRGP4650D-EPBF Infineon Technologies
Description: IGBT 600V 76A 268W TO247AD, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 120 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 46ns/105ns, Switching Energy: 390µJ (on), 632µJ (off), Test Condition: 400V, 35A, 10Ohm, 15V, Gate Charge: 104 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 76 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 268 W.
Інші пропозиції IRGP4650D-EPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRGP4650D-EPBF | Виробник : Infineon / IR |
IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC |
на замовлення 59 шт: термін постачання 21-30 дні (днів) |
|
|
|
IRGP4650D-EPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 76A 268W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 46ns/105ns Switching Energy: 390µJ (on), 632µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Obsolete Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 105 A Power - Max: 268 W |
товар відсутній |
|
 |
IRGP4650D-EPBF | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 76A; 268W; TO247-3; single transistor Collector-emitter voltage: 600V Power dissipation: 268W Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Kind of package: tube Semiconductor structure: single transistor Case: TO247-3 Collector current: 76A Mounting: THT |
товар відсутній |