IRL510A ON Semiconductor

Description: MOSFET N-CH 100V 5.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 2.8A, 5V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V.