IRLD120

IRLD120

Product id: 107905
Manufacturer:
Transistors - Field N-cannal

sihld120.pdf
On stock/available

Technical description IRLD120

Price IRLD120 From 15.21 UAH to 15.21 UAH

IRLD120
Manufacturer: SILI
N-MOSFET 100V 1.3A 1.3W 0.27? Trans. IRLD120 DIP4 TIRLD120
package quantity: 10 pc(s)
sihld120.pdf
available 100 pc(s)
lead time 14-28 days
23+ 15.21 UAH
IRLD120
IRLD120
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4-DIP
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
sihld120.pdf
out of stock, you can ask lead time by adding item to cart