Технічний опис IS43R16160F-5BL-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory: 256Mb DRAM, Memory organisation: 4Mx16bitx4, Clock frequency: 200MHz, Access time: 5ns, Case: TFBGA60, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 2.5V DC, кількість в упаковці: 2500 шт.
Інші пропозиції IS43R16160F-5BL-TR
| Фото | Назва | Виробник | Інформація |
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| IS43R16160F-5BL-TR | Виробник : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC кількість в упаковці: 2500 шт |
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IS43R16160F-5BL-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC DDR 256MB 200MHZ 2.5V 60BGA |
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IS43R16160F-5BL-TR | Виробник : ISSI |
DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz |
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| IS43R16160F-5BL-TR | Виробник : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
товар відсутній |