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IS61WV25616EDBLL-8TLI-TR

IS61WV25616EDBLL-8TLI-TR ISSI


61-64wv25616edbll.pdf Виробник: ISSI
SRAM Chip Async Single 3.3V 4M-bit 256K x 16 8ns 44-Pin TSOP-II T/R
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Технічний опис IS61WV25616EDBLL-8TLI-TR ISSI

Description: IC SRAM 4MBIT PARALLEL 44TSOP II, Packaging: Tape & Reel (TR), Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 8ns, Memory Interface: Parallel, Access Time: 8 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.

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IS61WV25616EDBLL-8TLI-TR IS61WV25616EDBLL-8TLI-TR Виробник : ISSI 61-64wv25616edbll.pdf SRAM Chip Async Single 3.3V 4M-bit 256K x 16 8ns 44-Pin TSOP-II T/R
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IS61WV25616EDBLL-8TLI-TR IS61WV25616EDBLL-8TLI-TR Виробник : ISSI, Integrated Silicon Solution Inc 61-64WV25616EDBLL.pdf Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 8ns
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IS61WV25616EDBLL-8TLI-TR IS61WV25616EDBLL-8TLI-TR Виробник : ISSI 61_64WV25616EDBLL-258483.pdf SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns,3.3V,44 Pin TSOP II, RoHS
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