Технічний опис IS62WV51216EBLL-45TLI-TR ISSI
Description: IC SRAM 8MBIT PARALLEL 44TSOP II, Packaging: Tape & Reel (TR), Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.2V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 45ns, Memory Interface: Parallel, Access Time: 45 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції IS62WV51216EBLL-45TLI-TR
| Фото | Назва | Виробник | Інформація |
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| IS62WV51216EBLL-45TLI-TR | Виробник : ISSI |
 SRAM Chip Async Single 2.5V/3.3V 8M-bit 512K x 16 45ns 44-Pin TSOP-II T/R |
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| IS62WV51216EBLL-45TLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V кількість в упаковці: 1000 шт |
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IS62WV51216EBLL-45TLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 8MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
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IS62WV51216EBLL-45TLI-TR | Виробник : ISSI |
SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v-3.6v,44 Pin TSOP II, RoHS |
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| IS62WV51216EBLL-45TLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 45ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.2...3.6V |
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