Технічний опис IS62WV5128BLL-55TLI-TR ISSI
Description: IC SRAM 4MBIT PARALLEL 32TSOP I, Packaging: Tape & Reel (TR), Package / Case: 32-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.5V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 32-TSOP I, Part Status: Active, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 8, DigiKey Programmable: Not Verified.
Інші пропозиції IS62WV5128BLL-55TLI-TR
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| IS62WV5128BLL-55TLI-TR | Виробник : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V кількість в упаковці: 1500 шт |
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IS62WV5128BLL-55TLI-TR | Виробник : ISSI |
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 55ns 32-Pin TSOP-II T/R |
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IS62WV5128BLL-55TLI-TR | Виробник : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 32TSOP I Packaging: Tape & Reel (TR) Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Part Status: Active Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
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IS62WV5128BLL-55TLI-TR | Виробник : ISSI |
SRAM 4Mb, Low Power/Power Saver,Async,512K x 8,55ns,2.5v-3.6v,32 Pin TSOP I (8x20mm), RoHS |
товар відсутній |
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| IS62WV5128BLL-55TLI-TR | Виробник : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...3.6V |
товар відсутній |