Технічний опис ISL9R860P2 ON Semiconductor
Description: DIODE GEN PURP 600V 8A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Avalanche, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.
Інші пропозиції ISL9R860P2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ISL9R860P2 | Виробник : ON Semiconductor |
 Rectifier Diode Switching 600V 8A 30ns 2-Pin(2+Tab) TO-220 Tube |
товар відсутній |
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ISL9R860P2 | Виробник : onsemi |
Description: DIODE GEN PURP 600V 8A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товар відсутній |
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ISL9R860P2 | Виробник : onsemi / Fairchild |
Diodes - General Purpose, Power, Switching 8a 600V Stealth Single |
товар відсутній |