IXBT16N170A IXYS
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 65nC
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 40A
Turn-on time: 43ns
Turn-off time: 370ns
Type of transistor: IGBT
Power dissipation: 150W
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 878.49 грн |
3+ | 771.23 грн |
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Технічний опис IXBT16N170A IXYS
Description: IGBT 1700V 16A TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 360 ns, Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A, Supplier Device Package: TO-268AA, Td (on/off) @ 25°C: 15ns/160ns, Switching Energy: 1.2mJ (off), Test Condition: 1360V, 10A, 10Ohm, 15V, Gate Charge: 65 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 150 W.
Інші пропозиції IXBT16N170A за ціною від 744.39 грн до 1380.96 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IXBT16N170A | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268 Technology: BiMOSFET™ Mounting: SMD Case: TO268 Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 65nC Collector-emitter voltage: 1.7kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 40A Turn-on time: 43ns Turn-off time: 370ns Type of transistor: IGBT Power dissipation: 150W кількість в упаковці: 1 шт |
на замовлення 9 шт: термін постачання 7-14 дні (днів) |
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IXBT16N170A | Виробник : IXYS | IGBT Transistors 1700V 16A |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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IXBT16N170A | Виробник : IXYS |
Description: IGBT 1700V 16A TO268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 360 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 1.2mJ (off) Test Condition: 1360V, 10A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W |
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