IXDN602SI IXYS Integrated Circuits Division
Виробник: IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC-EP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3812 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 166.76 грн |
10+ | 144.24 грн |
25+ | 136.09 грн |
100+ | 108.84 грн |
300+ | 102.19 грн |
500+ | 89.42 грн |
1000+ | 72.87 грн |
2500+ | 67.85 грн |
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Технічний опис IXDN602SI IXYS Integrated Circuits Division
Description: IC GATE DRVR LOW-SIDE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Supply: 4.5V ~ 35V, Input Type: Non-Inverting, Supplier Device Package: 8-SOIC-EP, Rise / Fall Time (Typ): 7.5ns, 6.5ns, Channel Type: Independent, Driven Configuration: Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 3V, Current - Peak Output (Source, Sink): 2A, 2A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції IXDN602SI за ціною від 98.96 грн до 182.99 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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IXDN602SI | Виробник : IXYS Integrated Circuits | Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET |
на замовлення 1283 шт: термін постачання 21-30 дні (днів) |
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IXDN602SI | Виробник : Littelfuse | Driver 2A 2-OUT Low Side Non-Inv 8-Pin SOIC EP Tube |
товар відсутній |
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IXDN602SI | Виробник : Littelfuse | Driver 2A 2-OUT Low Side Non-Inv 8-Pin SOIC EP Tube |
товар відсутній |
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IXDN602SI | Виробник : IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns кількість в упаковці: 1 шт |
товар відсутній |
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IXDN602SI | Виробник : IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,gate driver; SO8-EP; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -2...2A Number of channels: 2 Supply voltage: 4.5...35V Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
товар відсутній |