IXFH150N30X3 IXYS
Виробник: IXYSDescription: MOSFET N-CH 300V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1295.54 грн |
| 30+ | 1034.63 грн |
| 120+ | 969.96 грн |
Відгуки про товар
Написати відгук
Технічний опис IXFH150N30X3 IXYS
Description: MOSFET N-CH 300V 150A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Інші пропозиції IXFH150N30X3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXFH150N30X3 | Виробник : Littelfuse |
Trans MOSFET N-CH 300V 150A 3-Pin(3+Tab) TO-247 |
товар відсутній |
|
 |
IXFH150N30X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXFH150N30X3 | Виробник : IXYS |
MOSFET MSFT N-CH ULTRA JNCT X3 3&44 |
товар відсутній |
|
|
|
IXFH150N30X3 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 150A Power dissipation: 890W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 167ns |
товар відсутній |