IXFH34N60X2A IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 540W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Technology: HiPerFET™; X2-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 68A
Mounting: THT
Case: TO247-3
Reverse recovery time: 164ns
Drain-source voltage: 600V
Drain current: 34A
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 471.38 грн |
3+ | 389.16 грн |
6+ | 368.35 грн |
10+ | 366.96 грн |
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Технічний опис IXFH34N60X2A IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W, On-state resistance: 0.1Ω, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 540W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: ultra junction x-class, Gate charge: 56nC, Technology: HiPerFET™; X2-Class, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 68A, Mounting: THT, Case: TO247-3, Reverse recovery time: 164ns, Drain-source voltage: 600V, Drain current: 34A, кількість в упаковці: 1 шт.
Інші пропозиції IXFH34N60X2A за ціною від 425.37 грн до 565.66 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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IXFH34N60X2A | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W On-state resistance: 0.1Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 540W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 56nC Technology: HiPerFET™; X2-Class Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 68A Mounting: THT Case: TO247-3 Reverse recovery time: 164ns Drain-source voltage: 600V Drain current: 34A кількість в упаковці: 1 шт |
на замовлення 11 шт: термін постачання 7-14 дні (днів) |
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IXFH34N60X2A | Виробник : IXYS | MOSFET DiscMSFTAuto-Ultra Junc X2Class TO-247AD |
товар відсутній |