IXFK32N80P

IXFK32N80P Littelfuse


ete_mosfets_n-channel_hiperfets_ixf_32n80p_datasheet.pdf.pdf Виробник: Littelfuse
Trans MOSFET N-CH 800V 32A 3-Pin(3+Tab) TO-264AA
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Технічний опис IXFK32N80P Littelfuse

Description: MOSFET N-CH 800V 32A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.

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IXFK32N80P IXFK32N80P Виробник : IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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IXFK32N80P IXFK32N80P Виробник : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_32n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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IXFK32N80P IXFK32N80P Виробник : IXYS media-3322369.pdf MOSFET 32 Amps 800V 0.27 Rds
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IXFK32N80P IXFK32N80P Виробник : IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
On-state resistance: 0.27Ω
Drain current: 32A
Drain-source voltage: 800V
Power dissipation: 830W
Polarisation: unipolar
Gate charge: 150nC
Kind of channel: enhanced
Type of transistor: N-MOSFET
товар відсутній