Технічний опис IXFK32N80P Littelfuse
Description: MOSFET N-CH 800V 32A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V.
Інші пропозиції IXFK32N80P
Фото | Назва | Виробник | Інформація |
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IXFK32N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264 Case: TO264 Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Drain current: 32A Drain-source voltage: 800V Power dissipation: 830W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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IXFK32N80P | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 800V 32A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V |
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IXFK32N80P | Виробник : IXYS | MOSFET 32 Amps 800V 0.27 Rds |
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IXFK32N80P | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264 Case: TO264 Mounting: THT Kind of package: tube On-state resistance: 0.27Ω Drain current: 32A Drain-source voltage: 800V Power dissipation: 830W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Type of transistor: N-MOSFET |
товар відсутній |